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HGTP1N120BND, HGT1S1N120BNDS
Data Sheet January 2000 File Number 4650.2
5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49314.
Features
* 5.3A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical EOFF. . . . . . . . . . . . . . . . . . . 120J at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Temperature Compensating SABERTM Model Thermal Impedance SPICE Model www.intersil.com/ * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Packaging
JEDEC TO-220AB
E C G
COLLECTOR
Ordering Information
PART NUMBER HGTP1N120BND HGT1S1N120BNDS PACKAGE TO-220AB TO-263AB BRAND 1N120BND 1N120BND
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e. HGT1S1N120BNDS9A.
JEDEC TO-263AB
Symbol
C G E G COLLECTOR (FLANGE)
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000 SABERTM is a trademark of Analogy, Inc.
HGTP1N120BND, HGT1S1N120BNDS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified ALL TYPES Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Rectified Forward Current at TC = 148oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 1200 5.3 2.7 4 6 20 30 6A at 1200V 60 0.476 -55 to 150 300 260 8 13 UNITS V A A A A V V W W/oC oC
oC oC
s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 82.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC MIN 1200 6.0 6 TYP 20 2.5 3.8 7.1 9.2 14 15 15 11 67 226 172 90 MAX 250 1.0 2.9 4.3 250 20 21 20 14 76 300 187 123 UNITS V A A mA V V V nA A V nC nC ns ns ns ns J J
Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT) VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON EOFF
IC = 1.0A VGE = 15V
TC = 25oC TC = 150oC
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge
IC = 50A, VCE = VGE VGE = 20V TJ = 150oC, RG = 82, VGE = 15V, L = 2mH, VCE(PK) = 1200V IC = 1.0A, VCE = 0.5 BVCES IC = 1.0A, VCE = 0.5 BVCES VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3)
IGBT and Diode at TJ = 25oC ICE = 1.0A VCE = 0.8 BVCES VGE = 15V RG = 82 L = 4mH Test Circuit (Figure 20)
2
HGTP1N120BND, HGT1S1N120BNDS
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time Thermal Resistance Junction To Case TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF VEC trr RJC IEC = 1.0A IEC = 1.0A, dIEC/dt = 200A/s IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-on losses include losses due to diode recovery. TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = 1.0A VCE = 0.8 BVCES VGE = 15V RG = 82 L = 4mH Test Circuit (Figure 20) MIN TYP 13 11 75 258 385 120 1.3 MAX 17 15 88 370 440 175 1.8 50 2.1 3 UNITS ns ns ns ns J J V ns
oC/W oC/W
Typical Performance Curves
6 ICE , DC COLLECTOR CURRENT (A) 5 4 3 2 1 0 25
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A) 7 6 5 4 3 2 1 0
VGE = 15V
TJ = 150oC, RG = 82, VGE = 15V, L = 2mH
50
75
100
125
150
0
200
400
600
800
1000
1200
1400
TC , CASE TEMPERATURE (oC)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
300 200 100
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
fMAX , OPERATING FREQUENCY (kHz)
TJ = 150oC, RG = 82, L = 4mH, VCE = 960V
TC 75oC 75oC 110oC 110oC
VGE 15V 13V 15V 13V
VCE = 840V, RG = 82, TJ = 125oC
18 tSC 16
18
16
14 ISC
14
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 2.1oC/W, SEE NOTES 1.0 2.0 3.0
12
12
5 0.5
10 13
13.5
14
14.5
10 15
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
ISC, PEAK SHORT CIRCUIT CURRENT (A)
20
20
HGTP1N120BND, HGT1S1N120BNDS Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) 6 5 4 3 2 1 0 TC = 25oC
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A) 6 5 4 3 2 1 0 TC = -55oC TC = 150oC
TC = 25oC
TC = -55oC TC = 150oC
PULSE DURATION = 250s DUTY CYCLE < 0.5%, VGE = 13V 0 2 4 6 8 10
PULSE DURATION = 250s DUTY CYCLE < 0.5%, VGE = 15V 0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1200 1000 800 600 400 200 0 0.5 EOFF, TURN-OFF ENERGY LOSS (J) EON , TURN-ON ENERGY LOSS (J) RG = 82, L = 4mH, VCE = 960V TJ = 150oC, VGE = 13V TJ = 150oC, VGE = 15V
250 RG = 82, L = 4mH, VCE = 960V 200
TJ = 150oC, VGE = 13V OR 15V
150 TJ = 25oC, VGE = 13V OR 15V
100
TJ = 25oC, VGE = 13V TJ = 25oC, VGE = 15V 1 1.5 2 2.5 3
50
0 0.5
1
1.5
2
2.5
3
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
24
28 RG = 82, L = 4mH, VCE = 960V 24 trI , RISE TIME (ns)
td(ON)I , TURN-ON DELAY TIME (ns)
RG = 82, L = 4mH, VCE = 960V
20
20 16 12 8 4 0.5
TJ = 25oC, TJ = 150oC, VGE = 13V
16
TJ 25oC 150oC
VGE
12
13V 13V 25oC 15V 150oC 15V
TJ = 25oC, TJ = 150oC, VGE = 15V
8
0
1
1.5
2
2.5
3
1
1.5
2
2.5
3
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
4
HGTP1N120BND, HGT1S1N120BNDS Typical Performance Curves
td(OFF)I , TURN-OFF DELAY TIME (ns) 84 80 TJ = 150oC, VGE = 15V 76 72 68 64 60 56 TJ = 150oC, VGE = 13V TJ = 25oC, VGE = 15V TJ = 25oC, VGE = 13V tfI , FALL TIME (ns) RG = 82, L = 4mH, VCE = 960V
Unless Otherwise Specified (Continued)
360 320 280 240 200 160 120 0.5
RG = 82, L = 4mH, VCE = 960V
TJ = 150oC, VGE = 13V OR 15V
TJ = 25oC, VGE = 13V OR 15V
0.5
1
1.5
2
2.5
3
1
1.5
2
2.5
3
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE , COLLECTOR TO EMITTER CURRENT (A)
18 16 14 12 10 8 6 4 2 0 7
VGE , GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VCE = 20V PULSE DURATION = 250s TC = -55oC
15 VCE = 800V 12 VCE = 400V 9 VCE = 1200V
TC = 25oC TC = 150oC
6
3 IG(REF) = 1mA, RL = 600, TC = 25oC 0 0 4 8 12 16 20
8
9
10
11
12
13
14
15
VGE , GATE TO EMITTER VOLTAGE (V)
QG , GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14. GATE CHARGE WAVEFORMS
350 FREQUENCY = 1MHz 300 C, CAPACITANCE (pF) CIES 250 200 150 100 COES 50 CRES 0 0 5 10 15 20 25
6 5 4 3 VGE = 10V 2 1 0 PULSE DURATION = 250s DUTY CYCLE < 0.5%, TC = 110oC VGE = 15V VGE = 12V
0
2
4
6
8
10
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5
HGTP1N120BND, HGT1S1N120BNDS Typical Performance Curves
ZJC , NORMALIZED THERMAL RESPONSE 2.0 1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.005 10-5 10-4 10-3 10-2 PD t2 SINGLE PULSE DUTY FACTOR, D = tt1 // tt2 DUTY FACTOR, D = 1 2 PEAK TJ = (PD X ZJC X RJC)) + TC PEAK TJ = (PD X ZJC X RJC + TC 10-1 100 t1
Unless Otherwise Specified (Continued)
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
5 IEC , FORWARD CURRENT (A)
70 TC = 25oC, dIEC/dt = 200A/s 60
2 TC = 150oC 1 TC = -55oC
t, RECOVERY TIMES (ns)
50 40 30 20 10 0
trr
0.5 TC = 25oC
ta tb
0.2
0.1 0 0.4 0.8 1.2 1.6 2.0 VEC , FORWARD VOLTAGE (V)
0.5
1
2
3
4
5
IEC , FORWARD CURRENT (A)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveforms
VGE 90% L = 4mH RHRD4120 10% EON EOFF ICE + 90% VDD = 960V VCE tfI td(OFF)I 10% td(ON)I trI ICE
RG = 82
-
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
6
HGTP1N120BND, HGT1S1N120BNDS Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com 7
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